• DocumentCode
    1557454
  • Title

    Trends in DRAM dielectrics

  • Author

    Tang, K.S. ; Lau, W.S. ; Samudra, G.S.

  • Volume
    13
  • Issue
    3
  • fYear
    1997
  • fDate
    5/1/1997 12:00:00 AM
  • Firstpage
    27
  • Lastpage
    34
  • Abstract
    We trace the development of the ON/ONO dielectric film and examine the potential of new dielectrics with high dielectric constants such as Ta2O5 and ferroelectric materials. We also examine hemispherical grained (HSG) polysilicon, which is an innovative way to increase the effective area of the capacitor
  • Keywords
    DRAM chips; capacitors; dielectric thin films; ferroelectric thin films; permittivity; DRAM; ON/ONO dielectric film; Si; Ta2O5; capacitor; dielectric constant; ferroelectric material; hemispherical grained polysilicon; Capacitance; Capacitors; Chemical vapor deposition; Dielectric materials; Electrodes; Ferroelectric materials; High-K gate dielectrics; Oxidation; Random access memory; Silicon;
  • fLanguage
    English
  • Journal_Title
    Circuits and Devices Magazine, IEEE
  • Publisher
    ieee
  • ISSN
    8755-3996
  • Type

    jour

  • DOI
    10.1109/101.589261
  • Filename
    589261
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1557454