Suppression of the floating-body effect using SiGe layers in vertical surrounding-gate MOSFETs

Author

Date, Celisa K. ; Plummer, James D.

Author_Institution

Paul Allen Center for Integrated Syst., Stanford Univ., CA, USA

Volume

48

Issue

12

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2684

Lastpage

2689

Abstract

The use of silicon germanium (SiGe) heterostructures in vertical surrounding-gate MOSFETs provides an additional means for tailoring current-voltage (I-V) characteristics by controlling physical effects inside the device. Incorporation of an SiGe layer in the vertical MOSFET source can delay the floating-body effect by changing the back injection efficiency and current gain of the parasitic bipolar junction transistor (BJT). Structures with abrupt and ramped SiGe source layers showed up to 2 V and 6 V increases in breakdown voltage at low gate voltages with suppression of the floating-body effect kink. Comparison of simulation to experiment displayed the difficulties of accurately predicting device parameters, but demonstrated the usefulness of simulation to qualitatively predict device behavior

Keywords

Ge-Si alloys; MOSFET; avalanche breakdown; semiconductor device breakdown; semiconductor device models; I-V characteristics; MEDICI simulator; SiGe; SiGe heterostructures; SiGe layer; abrupt SiGe source layers; avalanche breakdown; back injection efficiency; breakdown voltage; current gain; current-voltage characteristics; floating-body effect kink; floating-body effect suppression; parasitic BJT; parasitic bipolar junction transistor; ramped SiGe source layers; source engineering; vertical MOSFET source; vertical surrounding-gate MOSFETs; Acceleration; Electric breakdown; Germanium silicon alloys; Impact ionization; MOSFETs; Photonic band gap; Predictive models; Random access memory; Silicon germanium; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974690

Filename

974690