• DocumentCode
    1557517
  • Title

    CMOS APS MTF modeling

  • Author

    Shcherback, Igor ; Yadid-Pecht, Orly

  • Author_Institution
    Dept. of Electr. Eng., Ben-Gurion Univ. of the Negev, Beer-Sheva, Israel
  • Volume
    48
  • Issue
    12
  • fYear
    2001
  • fDate
    12/1/2001 12:00:00 AM
  • Firstpage
    2710
  • Lastpage
    2715
  • Abstract
    In this paper, a unified model, based on a thorough analysis of experimental data, is developed for the overall modulation transfer function (MTF) estimation for CMOS image sensors. The model covers the physical diffusion effect together with the influence of the pixel active area geometrical shape. Comparison of both our predicted results and the MTF calculated from the point spread function (PSF) measurements of an actual pixel array gives excellent agreement. This confirms the hypothesis that the active area shape together with the photocarrier diffusion effect are the determining factors of the overall CMOS active pixel sensor (APS) MTF behavior, and allows us to extract the minority-carrier diffusion length. The results indicate that for any potential active area shape, a reliable estimate of image performance is possible, so the tradeoff between the conflicting requirements, such as signal-to-noise ratio (SNR) and MTF could be compared per pixel design
  • Keywords
    CMOS image sensors; carrier lifetime; integrated circuit modelling; integrated circuit noise; minority carriers; optical transfer function; parameter estimation; CMOS APS MTF modeling; CMOS active pixel sensor; CMOS image sensors; MTF estimation; SNR; minority carrier diffusion length; modulation transfer function; parameter estimation; photocarrier diffusion effect; physical diffusion effect; pixel active area geometrical shape; pixel array; point spread function measurements; signal-to-noise ratio; unified model; Active shape model; CMOS image sensors; Data analysis; Image analysis; Pixel; Semiconductor device modeling; Signal design; Signal to noise ratio; Solid modeling; Transfer functions;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.974694
  • Filename
    974694