• DocumentCode
    1557534
  • Title

    X-Band to W-Band Frequency Multiplier in 65 nm CMOS Process

  • Author

    Mazor, Nadav ; Socher, Eran

  • Author_Institution
    Sch. of Electr. Eng., Tel Aviv Univ., Tel Aviv, Israel
  • Volume
    22
  • Issue
    8
  • fYear
    2012
  • Firstpage
    424
  • Lastpage
    426
  • Abstract
    A compact single chip x9 frequency multiplier from X band to W band implemented in 65 nm CMOS is presented. A chain of five transformer coupled stages is used, including two triplers, realized with differential common source amplifiers at class-C mode. The circuit reaches saturated output power of -3.2 dBm at 91.8 GHz with a 7.2% bandwidth from 88.9 to 95.5 GHz. The suppression of unwanted harmonics is better than 16 dBc across the bandwidth. The core design occupies 246 μm × 706 μm and consumes 120 mW from a 1.2 V supply. Supply voltage increase to 1.3 V yields a peak output power of -2.7 dBm and 160 mW of dc power.
  • Keywords
    CMOS integrated circuits; frequency multipliers; harmonics suppression; millimetre wave integrated circuits; transformers; CMOS process; DC power; W-band frequency multiplier; X-band frequency multiplier; class-C mode; differential common source amplifiers; frequency 88.9 GHz to 95.5 GHz; power 160 mW; size 65 nm; transformer; unwanted harmonics suppression; voltage 1.2 V; Bandwidth; CMOS integrated circuits; Frequency synthesizers; Harmonic analysis; Impedance matching; Power generation; Power measurement; CMOS millimeter-wave frequency multiplier; W-band; X-band; transformers;
  • fLanguage
    English
  • Journal_Title
    Microwave and Wireless Components Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1531-1309
  • Type

    jour

  • DOI
    10.1109/LMWC.2012.2207708
  • Filename
    6239618