DocumentCode :
1557534
Title :
X-Band to W-Band Frequency Multiplier in 65 nm CMOS Process
Author :
Mazor, Nadav ; Socher, Eran
Author_Institution :
Sch. of Electr. Eng., Tel Aviv Univ., Tel Aviv, Israel
Volume :
22
Issue :
8
fYear :
2012
Firstpage :
424
Lastpage :
426
Abstract :
A compact single chip x9 frequency multiplier from X band to W band implemented in 65 nm CMOS is presented. A chain of five transformer coupled stages is used, including two triplers, realized with differential common source amplifiers at class-C mode. The circuit reaches saturated output power of -3.2 dBm at 91.8 GHz with a 7.2% bandwidth from 88.9 to 95.5 GHz. The suppression of unwanted harmonics is better than 16 dBc across the bandwidth. The core design occupies 246 μm × 706 μm and consumes 120 mW from a 1.2 V supply. Supply voltage increase to 1.3 V yields a peak output power of -2.7 dBm and 160 mW of dc power.
Keywords :
CMOS integrated circuits; frequency multipliers; harmonics suppression; millimetre wave integrated circuits; transformers; CMOS process; DC power; W-band frequency multiplier; X-band frequency multiplier; class-C mode; differential common source amplifiers; frequency 88.9 GHz to 95.5 GHz; power 160 mW; size 65 nm; transformer; unwanted harmonics suppression; voltage 1.2 V; Bandwidth; CMOS integrated circuits; Frequency synthesizers; Harmonic analysis; Impedance matching; Power generation; Power measurement; CMOS millimeter-wave frequency multiplier; W-band; X-band; transformers;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2012.2207708
Filename :
6239618
Link To Document :
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