High-speed CMOS circuit testing by 50 ps time-resolved luminescence measurements

Author

Stellari, Franco ; Zappa, Franco ; Cova, Sergio ; Porta, Cristian ; Tsang, James C.

Author_Institution

Dipt. di Elettronica e Inf., Politecnico di Milano, Italy

Volume

48

Issue

12

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2830

Lastpage

2835

Abstract

Noninvasive characterization of CMOS ring oscillators with 50 ps resolution is obtained by exploiting the broad-band infrared emission from switching transistors. A fast silicon single-photon avalanche-diode (SPAD) is used to attain high sensitivity and time resolution. Switching transitions of both nand p-channel MOSFETs are measured and the main features in the circuit operation are characterized. Systematic variations and increased jitter of switching transitions due to phase noise are accurately measured

Keywords

CMOS integrated circuits; MOSFET; ULSI; electroluminescence; high-speed integrated circuits; high-speed techniques; inspection; integrated circuit noise; integrated circuit testing; jitter; phase noise; time resolved spectroscopy; 20 GHz; 50 ps; 50 ps resolution; CMOS ring oscillator; PICA; ULSI; broad-band infrared emission; fast silicon single-photon avalanche-diode; high sensitivity; high-speed CMOS circuit testing; hot-electron luminescence; jitter; n-channel MOSFETs; noninvasive characterization; optical inspection technique; p-channel MOSFETs; phase noise; picosecond imaging for circuit analysis; switching transistors; time correlated photon counting; time resolution; time-resolved luminescence measurements; Circuit testing; Jitter; Luminescence; MOSFETs; Noise measurement; Phase measurement; Phase noise; Ring oscillators; Silicon; Switching circuits;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974711

Filename

974711