• DocumentCode
    1557578
  • Title

    Enhanced silicon solar cell performance by rapid thermal firing of screen-printed metals

  • Author

    Jeong, Ji-Weon ; Rohatgi, Ajeet ; Yelundur, Vijay ; Ebong, Abasifreke ; Rosenblum, Mark D. ; Kalejs, Juris P.

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
  • Volume
    48
  • Issue
    12
  • fYear
    2001
  • fDate
    12/1/2001 12:00:00 AM
  • Firstpage
    2836
  • Lastpage
    2841
  • Abstract
    Rapid thermal processing (RTP) of screen-printed (SP) Al on the back and silver (Ag) grid on the front produced significant improvement in back surface field (BSF) of n+-p-p+ float-zone (FZ) Si solar cells. Two-step firing was found to form more effective BSF than co-firing, resulting in 0.6-1.0% increase in absolute cell efficiency. In addition, RTP was found to be more effective than the beltline processing (BLP), resulting in 0.5-1.0% increase in absolute cell efficiency. Although the Al-BSF formed by the BLP was inferior to the RTP, the difference between the two is virtually eliminated during the subsequent RTP contact firing. Internal quantum efficiency (IQE) analysis of the solar cells gave effective back surface recombination velocities (Seff) of >5000 cm/s and ~1500 cm/s for co-firing in the BLP and the RTP, respectively. Two-step firing produced Seff of ~1500 cm/s and ~700 cm/s in the BLP and the RTP, respectively. However, Seff for the two-step firing, involving BLP BSF formation followed by RTP contact firing, was found to be ~700 cm/s, which indicates that RTP contact firing with a faster ramp-up (100°C/s) restores the poor-quality BLP BSF. On the other hand, BLP contact firing with a slow ramp-up (<10°C/s) degrades the high-quality RTP BSF, increasing Seff from ~700 cm/s to ~1500 cm/s
  • Keywords
    elemental semiconductors; rapid thermal processing; semiconductor device manufacture; silicon; solar cells; surface recombination; 400 to 850 C; IQE analysis; RTP contact firing; Si solar cell performance enhancement; Si-Ag; Si-Al; absolute cell efficiency; back surface field; back surface recombination velocities; beltline processing; internal quantum efficiency; n+-p-p+ float-zone Si solar cells; open circuit voltage; rapid thermal firing; rapid thermal processing; screen-printed metals; temperature ramp-up; two-step firing; Costs; Fabrication; Firing; Photovoltaic cells; Photovoltaic systems; Radiative recombination; Rapid thermal processing; Silicon; Silver; Solar power generation;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.974713
  • Filename
    974713