Theory of 1/f noise currents in semiconductor devices with one-dimensional geometry and its application to Si Schottky barrier diodes

Author

Kim, Jung-Sik ; Kim, Yong Seok ; Min, Hong Shick ; Park, Young June

Author_Institution

Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

Volume

48

Issue

12

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2875

Lastpage

2883

Abstract

A theory of the short-circuit 1/f noise currents in semiconductor devices with one-dimensional geometry is derived using the noise current density equation with the 1/f noise source term based on the Hooge´s empirical 1/f noise relation. It is shown that both the number fluctuation model and the mobility fluctuation model for 1/f noise give the same result. The newly derived 1/f formula is shown to explain the measured 1/f noise currents of Si Schottky barrier rectifiers under both forward and reverse bias conditions with a single set of Hooge parameters of electrons and holes for a given device

Keywords

1/f noise; Schottky diodes; current density; elemental semiconductors; semiconductor device models; semiconductor device noise; short-circuit currents; silicon; solid-state rectifiers; Boltzmann constant; Hooge´s empirical noise relation; Schottky barrier rectifiers; Si; forward bias conditions; low-frequency noise; mobility fluctuation model; noise current density equation; number fluctuation model; one-dimensional geometry; reverse bias conditions; semiconductor devices; short-circuit 1/f noise currents; Acoustical engineering; Current density; Current measurement; Equations; Fluctuations; Geometry; Noise measurement; Schottky barriers; Semiconductor device noise; Semiconductor devices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974721

Filename

974721