Title :
Low frequency noise versus temperature spectroscopy of recently designed Ge JFETs
Author :
Grassi, Valerio ; Colombo, Carlo Francesco ; Camin, Daniel V.
Author_Institution :
Dipt. di Fisica, Ist. Nazionale di Fisica Nucl., Milan, Italy
fDate :
12/1/2001 12:00:00 AM
Abstract :
During the investigation of cryogenic properties of recently developed Ge JFETs we have applied the technique known in literature as low frequency noise versus temperature spectroscopy (LFN versus T). Using this method we have determined the energy levels of traps associated to Lorentzian noise found in the 30 to 40 K temperature range. To perform this task we have developed a computer-controlled experimental setup able to set the temperature within ±5 mK in the range 4 to 300 K during a spectral noise measurement. An approach for the calculation of the uncertainties that affect the evaluation of traps parameter is presented
Keywords :
cryogenic electronics; electron traps; elemental semiconductors; germanium; junction gate field effect transistors; semiconductor device measurement; semiconductor device noise; 30 to 40 K; 4 to 300 K; Ge; Ge JFET; Lorentzian noise; computer-controlled measurement; cryogenic properties; low frequency noise versus temperature spectroscopy; spectral noise; trap energy levels; Electron traps; Energy states; FETs; JFETs; Low-frequency noise; Noise level; Noise measurement; Performance evaluation; Spectroscopy; Temperature distribution;
Journal_Title :
Electron Devices, IEEE Transactions on
