Title :
(AlxGa1-x)0.5In0.5P/In 0.15Ga0.85As (x=0, 0. 3, 1. 0) heterostructure doped-channel FETs for microwave power applications
Author :
Yang, Shih-Cheng ; Chiu, Hsien-Chin ; Chan, Yi-Jen ; Lin, Hao-Hsiung ; Kuo, Jenn-Ming
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chungli, Taiwan
fDate :
12/1/2001 12:00:00 AM
Abstract :
The quaternary (AlxGa1-x)0.5In 0.5P (0⩽×⩽1) compounds on GaAs substrates are important materials used as a Schottky layer in microwave devices. In this report, we systematically investigated the electrical properties of quaternary (AlxGa1-x)0.5In0.5P materials and concluded that the best composition for improving the device performance is by substituting 30% (x=0.3) of Ga atoms for Al atoms in GaInP material. The Schottky barrier heights (φB) of (Al xGa1-x)0.5In0.5P layers were 0.85~1.00 eV. We successfully realized the (AlxGa1-x )0.5In0.5P/In0.15Ga0.85 As (x=0, 0.3, 1.0) doped-channel FETs (DCFETs) and demonstrated excellent dc, microwave, and power characteristics
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; microwave field effect transistors; microwave power transistors; power HEMT; (AlGa)InP-InGaAs; DC characteristics; Schottky barrier heights; Schottky layer; breakdown voltage; current density; device linearity; device performance; gas-source molecular beam epitaxy; heterostructure doped-channel FET; high-process uniformity; microwave power applications; power characteristics; quaternary compounds; reactive ion etching; Atomic layer deposition; Composite materials; Etching; FETs; Gallium arsenide; HEMTs; Heterojunctions; MODFETs; Microwave devices; Schottky barriers;
Journal_Title :
Electron Devices, IEEE Transactions on
