Microwave performance and modeling of InAs/AlSb/GaSb resonant interband tunneling diodes

Author

Fay, Patrick ; Lu, Jiang ; Xu, Yanyang ; Dame, N. ; Chow, David H. ; Schulman, Joel N.

Author_Institution

Dept. of Electr. Eng., Notre Dame Univ., IN, USA

Volume

49

Issue

1

fYear

2002

fDate

1/1/2002 12:00:00 AM

Firstpage

19

Lastpage

24

Abstract

The microwave frequency performance of InAs/ AlSb/GaSb resonant interband tunneling diodes has been examined experimentally. A bias-dependent small-signal circuit model that matches the measured data well for the full range of measured frequencies (dc to 35 GHz) and the full range of device biases (0 to 0.5 V) has been obtained. To the author´s knowledge, this is the first report of a microwave-frequency circuit model that is valid over the full range of device operating biases, including the negative differential resistance region. The bias dependence of the circuit elements contained within the model is examined, and is consistent with device operational principles

Keywords

S-parameters; aluminium compounds; current density; gallium compounds; indium compounds; microwave diodes; quantum well devices; resonant tunnelling diodes; semiconductor device models; 100 MHz to 35 GHz; Boltzmann statistics; InAs-AlSb-GaSb; S parameters; bias-dependent small-signal circuit model; device operating biases; microwave frequency performance; negative differential resistance region; parabolic energy-momentum dispersion relationship; quantum well; resonant interband tunneling diodes; Diodes; Electrical resistance measurement; Frequency measurement; Microwave circuits; Microwave devices; Microwave frequencies; Poisson equations; Power dissipation; Resonance; Resonant tunneling devices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974743

Filename

974743