Breakdown voltage and reverse recovery characteristics of free-standing GaN Schottky rectifiers

Author

Johnson, J.W. ; Zhang, A.P. ; Luo, Wen-Ben ; Ren, Fan ; Pearton, Stephen J. ; Park, S.S. ; Park, Y.J. ; Chyi, Jenn-Inn

Author_Institution

Dept. of Chem. Eng., Florida Univ., Gainesville, FL, USA

Volume

49

Issue

1

fYear

2002

fDate

1/1/2002 12:00:00 AM

Firstpage

32

Lastpage

36

Abstract

Schottky rectifiers with implanted p⁺ guard ring edge termination fabricated on free-standing GaN substrates show reverse breakdown voltages up to 160 V in vertical geometry devices. The specific on-state resistance was in the range 1.7-3.0 Ω·cm ², while the turn-on voltage was ~1.8 V. The switching performance was analyzed using the reverse recovery current transient waveform, producing an approximate high-injection, level hole lifetime of ~15 ns. The bulk GaN rectifiers show significant improvement in forward current density and on-state resistance over previous heteroepitaxial devices

Keywords

III-V semiconductors; Schottky diodes; gallium compounds; power semiconductor diodes; semiconductor device breakdown; solid-state rectifiers; wide band gap semiconductors; 1.8 V; 160 V; GaN; current-voltage characteristics; freestanding Schottky rectifiers; high-injection level hole lifetime; implanted p⁺ guard ring edge termination; power electronics; reverse breakdown voltages; reverse recovery current transient waveform; specific on-state resistance; switching performance; temperature dependence; vertical geometry devices; Aluminum gallium nitride; Electric breakdown; Electrons; Gallium nitride; Geometry; Power quality; Rectifiers; Substrates; Thermal conductivity; Voltage fluctuations;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.974745

Filename

974745