Title :
Accuracy of approximations in MOSFET charge models
Author :
McAndrew, Colin C. ; Victory, James J.
Author_Institution :
Motorola Inc., Tempe, AZ, USA
fDate :
1/1/2002 12:00:00 AM
Abstract :
This paper analyzes the results of common approximations made in MOSFET charge modeling. The basis for the comparison is a charge-sheet model that is valid in all regions of operation. We show that proper modeling of surface potential as a function of position along the channel is more important for capacitance coefficient modeling accuracy than partitioning of inversion charge between source and drain. In addition, we show that there is a numerical error in previous charge-sheet formulations, and provide a solution for this problem
Keywords :
MOSFET; SPICE; capacitance; iterative methods; semiconductor device models; surface potential; MOSFET charge modeling; SPICE; approximations accuracy; capacitance coefficient modeling accuracy; charge-sheet model; gradual-channel approximation; iterative solution; numerical error; partitioning simplification; surface potential; Capacitance; Geometry; Integrated circuit modeling; MOS devices; MOSFET circuits; Permittivity; SPICE; Semiconductor device modeling; Solid modeling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
