Title :
A method to extract mobility degradation and total series resistance of fully-depleted SOI MOSFETs
Author :
Sánchez, Francisco J García ; Ortiz-Conde, Adelmo ; Cerdeira, Antonio ; Estrada, Magali ; Flandre, Denis ; Liou, Juin J.
Author_Institution :
Laboratorio de Electronica del Estado Solido, Univ. Simon Bolivar, Caracas, Venezuela
fDate :
1/1/2002 12:00:00 AM
Abstract :
Free-carrier mobility degradation in the channel and drain/source series resistance are two important parameters limiting the performance of MOS devices. In this paper, we present a method to extract these parameters from the drain current versus gate voltage characteristics of fully-depleted (FD) SOI MOSFETs operating in the saturation region. This method is developed based on an integration function which reduces errors associated with the extraction procedure and on the DC characteristics of MOS devices having several different channel lengths. Simulation results and measured data of FD SOI MOSFETs are used to test and verify the method developed
Keywords :
MOSFET; carrier mobility; electric resistance; semiconductor device models; silicon-on-insulator; DC characteristics; MOS device channel lengths; Si; drain current versus gate voltage characteristics; drain/source series resistance; free-carrier mobility degradation; fully-depleted SOI MOSFETs; integration function; parameter extraction; saturation region; threshold voltage; total series resistance; velocity saturation; Circuit simulation; Data mining; Degradation; Electrical resistance measurement; Electronic mail; MOS devices; MOSFETs; Parameter extraction; Testing; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
