DocumentCode
1557733
Title
Essential physics of carrier transport in nanoscale MOSFETs
Author
Lundstrom, Mark ; Ren, Zhibin
Author_Institution
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Volume
49
Issue
1
fYear
2002
fDate
1/1/2002 12:00:00 AM
Firstpage
133
Lastpage
141
Abstract
The device physics of nanoscale MOSFETs is explored by numerical simulations of a model transistor. The physics of charge control, source velocity saturation due to thermal injection, and scattering in ultrasmall devices are examined. The results show that the essential physics of nanoscale MOSFETs can be understood in terms of a conceptually simple scattering model
Keywords
MOSFET; high field effects; impurity scattering; nanotechnology; semiconductor device models; ballistic MOSFET; carrier transport; charge carrier processes; charge control; device physics; nanoscale MOSFETs; numerical simulations; scattering model; semiconductor device modeling; source velocity saturation; thermal injection; transistors; ultrasmall devices; Backscatter; Electrostatics; MOSFETs; Nanoscale devices; Numerical simulation; Particle scattering; Physics; Quantum mechanics; Steady-state; Velocity control;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.974760
Filename
974760
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