Title :
Low-loss, high-voltage 6H-SiC epitaxial p-i-n diode
Author :
Fujihira, Keiko ; Tamura, Santoshi ; Kimoto, Tsunenobu ; Matsunami, Hiroyuki
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
fDate :
1/1/2002 12:00:00 AM
Abstract :
The p-i-n diodes were fabricated using 31 μm thick n-- and p-type 6H-SiC epilayers grown by horizontal cold-wall chemical vapor deposition (CVD) with nitrogen and aluminum doping, respectively. The diode exhibited a very high breakdown voltage of 4.2 kV with a low on-resistance of 4.6 mΩcm2. This on-resistance is lower (by a factor of five) than that of a Si p-i-n diode with a similar breakdown voltage. The leakage current density was substantially lower even at high temperatures. The fabricated SiC p-i-n diode showed fast switching with a turn-off time of 0.18 μs at 300 K. The carrier lifetime was estimated to be 0.64 μs at 300 K, and more than 5.20 μs at 500 K. Various characteristics of SiC p-i-n diodes which have an advantage of lower power dissipation owing to conductivity modulation were investigated.
Keywords :
carrier lifetime; leakage currents; losses; minority carriers; p-i-n diodes; power semiconductor diodes; power semiconductor switches; semiconductor device breakdown; semiconductor epitaxial layers; silicon compounds; vapour phase epitaxial growth; wide band gap semiconductors; 0.18 to 5.2 mus; 300 to 500 K; 31 micron; 4.2 kV; 6H-SiC epilayers; Al doping; HV p-i-n diode; N doping; chemical vapor deposition; conductivity modulation; fast switching; high breakdown voltage; high-voltage epitaxial p-i-n diode; horizontal cold-wall CVD; leakage current density; low on-resistance; low-loss 6H-SiC PIN diode; minority carrier lifetime; power device; Aluminum; Charge carrier lifetime; Chemical vapor deposition; Doping; Leakage current; Life estimation; Nitrogen; P-i-n diodes; Silicon carbide; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
