Title :
Ultralow leakage characteristics of ultrathin gate oxides (~3 nm) prepared by anodization followed by high-temperature annealing
Author :
Ting, Chieh-Chih ; Shih, Yen-Hao ; Hwu, Jenn-Gwo
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
1/1/2002 12:00:00 AM
Abstract :
The leakage current of an anodic oxide (ANO) is two orders lower than that of a rapid thermal oxide (RTO) due to the negative oxide trapped charges near the metal-ANO interface. Moreover, the ANO´s SILC characteristic is different from the RTO´s, since the charges might redistribute under a high electrical stress
Keywords :
MOS capacitors; MOSFET; anodisation; dielectric thin films; leakage currents; metal-insulator boundaries; rapid thermal annealing; 3 nm; ANO film; MOS capacitors; MOS devices; MOSFETs; RTA; SILC characteristic; SiO2-Si; anodic oxide; anodization; charge redistribution; high electrical stress; high-temperature annealing; leakage current; metal-oxide interface; negative oxide trapped charges; ultralow leakage characteristics; ultrathin gate oxides; Aluminum; Insulation; Leakage current; MOS capacitors; MOS devices; Oxidation; Rapid thermal annealing; Silicon; Thermal stresses; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
