Title :
The low frequency noise in reverse biased rectifier diodes
Author :
Marinov, Ognian ; Deen, M. J a m a l ; Loukanov, V. ; Velikov, V.
Author_Institution :
Tech. Univ. Sofia, Bulgaria
fDate :
1/1/2002 12:00:00 AM
Abstract :
The low frequency noise in rectifier diodes in the breakdown regime is investigated as a function of the reverse current. A dynamic "competition" between impact ionization and microplasma switching explains the nonmonotonic, repetitive and correlated variations in the breakdown dynamic resistance (dV/dI) slope, the noise level, and the noise waveform
Keywords :
impact ionisation; semiconductor device breakdown; semiconductor device noise; semiconductor diodes; semiconductor plasma; solid-state rectifiers; breakdown dynamic resistance; breakdown regime; correlated variations; impact ionization; low frequency noise; microplasma switching; noise level; noise waveform; nonmonotonic variations; repetitive variations; reverse biased rectifier diodes; reverse current; Charge carrier processes; Diodes; Electric breakdown; Frequency; Impact ionization; Knee; Leakage current; Low-frequency noise; Noise level; Rectifiers;
Journal_Title :
Electron Devices, IEEE Transactions on
