Author :
Kumar, Mahender ; Tan, Yue ; Sin, Johnny K O
Abstract :
The authors describe a simple, high performance thin-film silicon-on-insulator (TFSOI) complementary BiCMOS (C-BiCMOS) technology, which can be used in low power wireless communication applications. In this technology, a novel, high performance lateral BJT structure is implemented using a gate spacer to obtain a thin base width and a minimum base linkage to the external base for minimized base resistance. A lateral NPN transistor (with maximum oscillation frequency (fmax ) of 29 GHz, cut-off frequency (fT) of 8 GHz, current gain (hFE) of 78, and collect-emitter breakdown voltage with base open (BVCEO) of 5 V), a lateral PNP transistor (hFE of 51 and BVCEO of 4.5 V), and NMOS and PMOS transistors (0.5 μm channel length and 5 μm channel width, 0.5/-0.8 V threshold voltage) am fabricated. This technology provides very promising low power, low cost, and high performance solutions for RF mixed-signal system-on-a-chip (SoC) applications
Keywords :
BiCMOS integrated circuits; MMIC; UHF integrated circuits; integrated circuit technology; low-power electronics; mixed analogue-digital integrated circuits; silicon-on-insulator; -0.8 V; 0.5 V; 0.5 micron; 2 to 29 GHz; 4.5 V; 5 V; 5 micron; NMOS transistors; PMOS transistors; RF mixed-signal SoC applications; Si; TFSOI complementary BiCMOS technology; gate spacer; high performance BiCMOS technology; lateral BJT structure; lateral NPN transistor; lateral PNP transistor; low power wireless applications; minimized base resistance; system-on-a-chip applications; thin base width; thin-film SOI complementary BiCMOS technology; BiCMOS integrated circuits; Couplings; Cutoff frequency; Iron; MOS devices; Semiconductor thin films; Silicon on insulator technology; Space technology; System-on-a-chip; Wireless communication;
