Title :
Field emission characteristics of CoSi2/TaN-coated silicon emitter tips
Author :
Han, Byung Wook ; Lee, Jae Sin ; Ahn, Byung Tae
Author_Institution :
Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
This work has improved the emission characteristics of Si emitter tips by coating a CoSi/sub 2//TaN bilayer on the tips. The CoSi/sub 2/ layer was grown in situ by a reactive chemical-vapor deposition of cyclopentadienyl dicarbonyl cobalt at 650/spl deg/C. The TaN was then deposited on the CoSi/sub 2/ layer at 550/spl deg/C by a reactive sputtering of Ta with N as a reactive gas. The CoSi/sub 2//TaN-coated emitters showed a lower turn-on voltage and higher emission current than the CoSi/sub 2/- or TaN-coated emitters due to the low work function by TaN and the easy transport of electron by CoSi/sub 2/ with low resistivity. The long-term emission stability of CoSi/sub 2//TaN-coated Si emitter was as good as TaN-coated emitter.
Keywords :
CVD coatings; cobalt compounds; electron field emission; silicon; sputtered coatings; stability; tantalum compounds; vacuum microelectronics; work function; (100) p-type substrates; 550 degC; 650 degC; CoSi/sub 2/-TaN-Si; CoSi/sub 2//TaN bilayer; CoSi/sub 2//TaN-coated emitter tips; N; N reactive gas; Si; Si FEAs; Si emitter tips; Si field emitter arrays; cyclopentadienyl dicarbonyl cobalt; emission characteristics improvement; emission current; field emission characteristics; field emitters; long-term emission stability; low resistivity; low work function; reactive CVD; reactive chemical-vapor deposition; reactive sputtering; turn-on voltage; vacuum microelectronic devices; Chemical vapor deposition; Coatings; Cobalt; Field emitter arrays; Low voltage; Materials science and technology; Silicon compounds; Sputtering; Stability; Thermal conductivity;
Journal_Title :
Electron Device Letters, IEEE
