Impact of intrinsic channel resistance on noise performance of CMOS LNA

Author

Chen, Jiwei ; Shi, Bingxue

Author_Institution

Inst. of Microelectron., Tsinghua Univ., Beijing, China

Volume

23

Issue

1

fYear

2002

Firstpage

34

Lastpage

36

Abstract

Channel resistance cannot be neglected for CMOS circuits that operate at radio frequency (RF), especially for a low noise amplifier (LNA), which is a very important block in CMOS RF transceivers. The impact of channel resistance on the noise performance of an LNA is thoroughly studied and analyzed and new formulas are proposed systematically in this work. Furthermore, a revised noise figure optimization technique is discussed. Simulation results are also proposed. All of this work will be very instructive for the design of high-performance LNA.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; electric resistance; impedance matching; integrated circuit noise; 2.4 GHz; CMOS LNA; CMOS RF transceiver; RF operation; input impedance match; intrinsic channel resistance; low noise amplifier; noise figure optimization technique; noise performance; radiofrequency operation; CMOS technology; Circuit noise; Geometry; Impedance; Low-noise amplifiers; Noise figure; Performance analysis; Radio frequency; Radiofrequency amplifiers; Transceivers;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.974804

Filename

974804