Title :
Equivalent cell approach for extraction of the SILC distribution in flash EEPROM cells
Author :
Ielmini, Daniele ; Spinelli, Alessandro S. ; Lacaita, Andrea L. ; Modelli, Alberto
Author_Institution :
Dipt. di Elettronica e Inf., Politecnico di Milano, Italy
Abstract :
A new method for characterizing the distribution of the stress-induced leakage current (SILC) in flash memories is presented. The statistics of the leakage parameters are extracted directly from the time dependence of the threshold voltage distributions obtained in a single gate-stress experiment, without any need for tracking the behavior of the individual cells. The new technique can be used for fast evaluation and reliability projections, as well as providing a tool for statistical investigation on the oxide leakage mechanisms.
Keywords :
flash memories; integrated circuit reliability; integrated memory circuits; leakage currents; statistical analysis; voltage distribution; SILC distribution; equivalent-cell technique; flash EEPROM cells; flash memories; leakage parameters; oxide leakage; reliability estimation; reliability statistical investigation; single gate-stress experiment; stress-induced leakage current; threshold voltage distributions; Data mining; Degradation; EPROM; Flash memory; Leakage current; Nonvolatile memory; Statistical distributions; Threshold voltage; Voltage control;
Journal_Title :
Electron Device Letters, IEEE
