Nonquasistatic transient model of fully-depleted SOI MOSFET and its application to the analysis of charge sharing in an analog switch

Author

Dubois, Emmanuel ; Robilliart, Etienne

Author_Institution

CNRS, Villeneuve d´´Ascq, France

Volume

23

Issue

1

fYear

2002

Firstpage

43

Lastpage

45

Abstract

A fast one-dimensional (1-D) numerical model suitable for circuit analysis has been developed for fully-depleted silicon-on-insulator MOSFETs. The novel important feature of our CAD-oriented approach consists in a rigorous treatment of the nonquasistatic charge redistribution that ensures accuracy under fast switching conditions. The capabilities of this model are exemplified through the simulation of an analog transmission gate to evaluate the impact of charge sharing effects.

Keywords

MOSFET; charge injection; circuit simulation; semiconductor device models; silicon-on-insulator; transient analysis; CAD-oriented approach; Si; analog switch; analog transmission gate; charge sharing effects; circuit analysis application; fast 1D numerical model; fast switching conditions; fully-depleted SOI MOSFET; nonquasistatic charge redistribution; nonquasistatic transient model; one-dimensional numerical model; transient propagation; Analog circuits; Capacitance; Circuit simulation; Equations; Frequency; MOSFET circuits; Silicon on insulator technology; Switches; Switching circuits; Transient analysis;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.974807

Filename

974807