Quantifying the nature of hot carrier degradation in the spacer region of LDD nMOSFETs

Author

Manhas, S.K. ; De Souza, M.M. ; Oates, Anthony S.

Author_Institution

Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK

Volume

1

Issue

3

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

134

Lastpage

143

Abstract

A detailed quantitative analysis of the hot carrier degradation in the spacer region of LDD nMOSFETs using stress conditions for maximum hole (V_g ~ V_t), substrate (I_submax) and electron (V_g = V_d) current from microseconds is presented. Damage in the spacer region reveals a two-stage drain series resistance degradation with an early stage lasting about 100 ms. The nature of damage is investigated by alternate electron, hole injection, and charge pumping measurements. It is seen that the hot carrier damage in the spacer oxide in the early stage is dominated by interface state creation with no evidence of significant damage by trapping mechanism either by electrons or holes. These results are in contrast to degradation behavior in the channel region where damage by trapping is a well-established mechanism of degradation under electron or hole injection

Keywords

MOSFET; hot carriers; interface states; LDD nMOSFET; charge pumping; drain series resistance; electron injection; hole injection; hot carrier degradation; interface state creation; spacer oxide; Charge carrier processes; Charge measurement; Charge pumps; Current measurement; Degradation; Electrical resistance measurement; Electron traps; Hot carriers; MOSFETs; Stress;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/7298.974828

Filename

974828