Title :
Hot-carrier reliability comparison for pMOSFETs with ultrathin silicon-nitride and silicon-oxide gate dielectrics
Author :
Polishchuk, Igor ; Yeo, Yee-Chia ; Lu, Qiang ; King, Tsu-Jae ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
9/1/2001 12:00:00 AM
Abstract :
The degradation of 100-nm effective channel length pMOS transistors with 14 Å equivalent oxide thickness Jet Vapor Deposition (JVD) Si3N4 gate dielectric under hot-carrier stress is studied. Interface-state generation is identified as the dominant degradation mechanism. Hot-carrier-induced gate leakage may become a new reliability concern. Hot-carrier reliability of 14 Å Si3N4 transistors is compared to reliability of 16 Å SiO2 transistors
Keywords :
MOSFET; hot carriers; interface states; leakage currents; semiconductor device reliability; silicon compounds; vapour deposited coatings; 100 nm; 14 angstrom; 16 angstrom; Si3N4; SiO2; equivalent oxide thickness; hot carrier reliability; interface state generation; jet vapor deposition; leakage current; pMOSFET; silicon nitride; silicon oxide; ultrathin gate dielectric; Chemical vapor deposition; Degradation; Dielectric materials; High K dielectric materials; High-K gate dielectrics; Hot carriers; Interface states; Leakage current; MOSFET circuits; Stress;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/7298.974831
