Hot-carrier reliability comparison for pMOSFETs with ultrathin silicon-nitride and silicon-oxide gate dielectrics

Author

Polishchuk, Igor ; Yeo, Yee-Chia ; Lu, Qiang ; King, Tsu-Jae ; Hu, Chenming

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

1

Issue

3

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

158

Lastpage

162

Abstract

The degradation of 100-nm effective channel length pMOS transistors with 14 Å equivalent oxide thickness Jet Vapor Deposition (JVD) Si₃N₄ gate dielectric under hot-carrier stress is studied. Interface-state generation is identified as the dominant degradation mechanism. Hot-carrier-induced gate leakage may become a new reliability concern. Hot-carrier reliability of 14 Å Si₃N₄ transistors is compared to reliability of 16 Å SiO₂ transistors

Keywords

MOSFET; hot carriers; interface states; leakage currents; semiconductor device reliability; silicon compounds; vapour deposited coatings; 100 nm; 14 angstrom; 16 angstrom; Si₃N₄; SiO₂; equivalent oxide thickness; hot carrier reliability; interface state generation; jet vapor deposition; leakage current; pMOSFET; silicon nitride; silicon oxide; ultrathin gate dielectric; Chemical vapor deposition; Degradation; Dielectric materials; High K dielectric materials; High-K gate dielectrics; Hot carriers; Interface states; Leakage current; MOSFET circuits; Stress;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/7298.974831

Filename

974831