Title :
Relation between breakdown mode and location in short-channel nMOSFETs and its impact on reliability specifications
Author :
Degraeve, Robin ; Kaczer, Ben ; De Keersgieter, An ; Groeseneken, Guido
Author_Institution :
IMEC, Leuven, Belgium
fDate :
9/1/2001 12:00:00 AM
Abstract :
A method to determine the breakdown position in short channel nMOSFETs is introduced. We find that soft breakdown occurs exclusively in the transistor channel, while the hardest circuit-killing breakdowns occur above the source and drain extension regions. Since these breakdowns make up only a small fraction of all breakdowns, a relaxation of the reliability specification is possible
Keywords :
MOSFET; semiconductor device breakdown; semiconductor device reliability; breakdown location; breakdown mode; hard breakdown; oxide reliability; short-channel nMOSFET; soft breakdown; Breakdown voltage; CMOS process; Digital circuits; Electric breakdown; Extrapolation; Low voltage; MOSFETs; Predictive models; Stress; Testing;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/7298.974832
