• DocumentCode
    1557951
  • Title

    Embedded Flash on a Low-Power 65-nm Logic Technology

  • Author

    Fong, S. ; Ariyoshi, J. ; Ema, T.

  • Author_Institution
    Lattice Semicond. Inc., San Jose, CA, USA
  • Volume
    33
  • Issue
    9
  • fYear
    2012
  • Firstpage
    1261
  • Lastpage
    1263
  • Abstract
    We have successfully integrated an embedded Flash technology into a 65-nm leading-edge logic technology. We have also optimized the logic transistor characteristics to achieve an extremely low standby current suitable for consumer applications.
  • Keywords
    field programmable gate arrays; flash memories; low-power electronics; embedded flash memory; embedded flash technology; field-programmable gate arrays; leading-edge logic technology; logic transistor characteristics; low-power logic technology; size 65 nm; Arrays; Implants; Leakage current; Logic gates; MOS devices; Programming; Transistors; Embedded Flash memory; field-programmable gate arrays; low power;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2012.2204950
  • Filename
    6241403
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1557951