Title :
A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITs
Author :
Bellone, Salvatore ; Benedetto, Luigi Di ; Licciardo, Gian Domenico
Author_Institution :
Department of Information and Electrical Engineering (DIEII), Università degli Studi di Salerno, Fisciano, Italy
Abstract :
An original model of the potential barrier in the channel of bipolar static induction transistors (BSITs) is presented. The model allows us to evaluate the potential barrier height for an arbitrary gate topology and to accurately predict the minority and majority carrier densities at the middle of the channel for a generic gate bias. The validity of the model is verified by comparison with numerical simulations of BSIT structures reported by other authors and with original simulations carried out on silicon (Si) and silicon carbide (SiC) junction field-effect transistors.
Keywords :
Logic gates; Numerical models; Numerical simulation; Silicon; Silicon carbide; Transistors; 4H polytype of silicon carbide (4H-SiC); Bipolar mode field effect transistors (BMFETs); bipolar static induction transistors (BSITs); junction field-effect transistors (JFETs); semiconductor device modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2203601
