• DocumentCode
    1558044
  • Title

    A technique for correction of parasitic capacitance on microwave ft measurements of MESFET and HEMT devices

  • Author

    Feng, Milton ; Lau, C.L. ; Ito, C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
  • Volume
    39
  • Issue
    11
  • fYear
    1991
  • fDate
    11/1/1991 12:00:00 AM
  • Firstpage
    1880
  • Lastpage
    1882
  • Abstract
    A technique for determining the parasitic capacitance attributed to device layout geometry is described. This simple technique requires only on-wafer, cascade probe measurements on devices with varying gate widths. This technique will assist in the optimization of device layout design and in improving modeling performance for microwave and millimeter-wave applications
  • Keywords
    Schottky gate field effect transistors; capacitance measurement; high electron mobility transistors; microwave measurement; semiconductor device testing; solid-state microwave devices; HEMT; MESFET; cascade probe measurements; current gain cutoff frequency; device layout geometry; millimeter-wave applications; parasitic capacitance; Calibration; Capacitance measurement; Current measurement; Equations; HEMTs; MESFETs; Microwave devices; Microwave measurements; Microwave theory and techniques; Parasitic capacitance;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.97490
  • Filename
    97490
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1558044