High-Responsivity Modulation-Doped AlGaAs/InGaAs Thermopiles for Uncooled IR-FPA Utilizing Integrated HEMT–MEMS Technology

Author

Abe, Masayuki ; Abe, Yuki ; Kogushi, Noriaki ; Ang, Kian Siong ; Hofstetter, René ; Wang, Hong ; Ng, Geok Ing

Author_Institution

3D Bio Co., Ltd., Hadano, Japan

Volume

33

Issue

9

fYear

2012

Firstpage

1243

Lastpage

1245

Abstract

Novel thermopiles based on modulation-doped AlGaAs/InGaAs heterostructures are proposed and developed for the first time for uncooled IR focal plane array (FPA) image sensor application. The high responsivity R with the high-speed response time τare designed to be 4900 V/W with 110 μs. Based on integrated high-electron-mobility-transistor-microelectromechanical-system technology, the 32 × 32 matrix FPAs are fabricated to demonstrate its enhanced performance by blackbody measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled IR FPA applications.

Keywords

aluminium compounds; gallium arsenide; high electron mobility transistors; image sensors; indium compounds; micromechanical devices; thermopiles; AlGaAs-InGaAs; IR-FPA; heterostructures; high-responsivity modulation; integrated HEMT-MEMS technology; thermopiles; uncooled IR focal plane array image sensor; Arrays; Epitaxial layers; Fabrication; Gallium arsenide; HEMTs; Indium gallium arsenide; Temperature measurement; AlGaAs/InGaAs; Seebeck effect; focal plane array (FPA); heterostructure thermopile (H-PILE); high-electron mobility transistor (HEMT); infrared (IR) image sensor;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2204399

Filename

6242380