Title :
Quantum confinement effects in the subthreshold characteristics of short-channel DMDG MOSFET
Author :
Shee, Sharmistha ; Bhattacharyya, Gargee ; Dutta, Pranab K. ; Sarkar, Subir Kumar
Author_Institution :
Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India
fDate :
Jan. 31 2014-Feb. 2 2014
Abstract :
In this paper, 2D Poisson´s equation and 1D Schrödinger equation have been solved self-consistently to derive the analytical model of subthreshold current and subthreshold slope for DMDG SON MOSFET in sub 20 nm regime. Extensive study has been carried out to examine the behavior of subthreshold slope with the variation of different parameters like channel length, Si film thickness and doping concentration. It is found that the subthreshold slope in the proposed model have a near ideal value for a given Si film thickness and substrate doping concentration for channel length as short as 20nm.
Keywords :
MOSFET; Poisson equation; Schrodinger equation; elemental semiconductors; semiconductor doping; silicon; silicon-on-insulator; 1D Schrodinger equation; 2D Poisson equation; Si; channel length; doping concentration; film thickness; quantum confinement effects; short-channel DMDG MOSFET; substrate doping concentration; subthreshold characteristics; subthreshold current; subthreshold slope; Doping; Films; Logic gates; MOSFET; Semiconductor process modeling; Silicon; Substrates; Carrier energy quantization effects; dual material double-gate (DMDG); silicon-on-nothing (SON); subthreshold current; subthreshold slope;
Conference_Titel :
Control, Instrumentation, Energy and Communication (CIEC), 2014 International Conference on
Conference_Location :
Calcutta
DOI :
10.1109/CIEC.2014.6959062
