Double-sided cooling for high power IGBT modules using flip chip technology

Author

Gillot, Charlotte ; Schaeffer, Christian ; Massit, Claude ; Meysenc, Luc

Author_Institution

CEA/LETI, Grenoble, France

Volume

24

Issue

4

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

698

Lastpage

704

Abstract

A new technique for the packaging of IGBT modules has been developed. The components are sandwiched between two direct bond copper (DBC) substrates with aluminum nitride. Wire bonds are replaced with flip chip solder bumps, which allows cooling of components on both sides. Microchannel heat sinks are directly integrated in the package to decrease the thermal resistance of the module. Thus, a very compact module with high thermal performance is obtained. A prototype with two insulated gate bipolar transistors (IGBTs) and four diodes associated in parallel was realized and tested. In this paper, the innovative packaging technique is described, and results of thermal tests are presented

Keywords

cooling; flip-chip devices; heat sinks; insulated gate bipolar transistors; multichip modules; thermal resistance; Cu-AlN-Cu; direct bond copper substrates; double-sided cooling; flip chip solder bumps; flip chip technology; high power IGBT modules; microchannel heat sinks; multichip power modules; packaging; thermal performance; thermal resistance; thermal tests; Aluminum nitride; Bonding; Cooling; Copper; Flip chip; Insulated gate bipolar transistors; Packaging; Testing; Thermal resistance; Wire;

fLanguage

English

Journal_Title

Components and Packaging Technologies, IEEE Transactions on

Publisher

ieee

ISSN

1521-3331

Type

jour

DOI

10.1109/6144.974963

Filename

974963