Title :
CO2 detection using Al/Si Schottky diode by IR spectroscopic technique
Author :
Roy, Sandip ; Patil, Tarkeshwar Chandrakant ; Duttagupta, S.P. ; Ramakrishnan, Desikan
Author_Institution :
Centre for Nanotechnol. & Sci., Indian Inst. of Technol., Mumbai, Mumbai, India
fDate :
Jan. 31 2014-Feb. 2 2014
Abstract :
In this study, utility of aluminum-silicon (Al/Si) Schottky diode is demonstrated as an optical detector of carbon dioxide (CO2) in NIR (1.57 and 1.60 μm) region. For this purpose, a self-fabricated Al/Si Schottky diode (barrier height 0.71 eV) and a broad band infrared irradiation source were used. An acrylic sheet were used to filter higher wavelength irradiation. Schottky diode was fabricated by depositing aluminum on patterned n-silicon (resistivity 0.2-0.4 Ω-cm) by thermal evaporation technique. Presence of CO2 between the detector and the irradiation source showed decrease in reverse bias current up to 15 %. It is proposed that the demonstrated technique can be successfully employed in real time applications involving CO2 detection.
Keywords :
Schottky diodes; aluminium; carbon compounds; elemental semiconductors; gas sensors; infrared detectors; infrared spectra; optical fabrication; optical sensors; silicon; vacuum deposition; Al-Si; CO2; IR spectroscopic technique; acrylic sheet; broad band infrared irradiation source; electron volt energy 0.71 eV; optical detector; patterned n-silicon deposition; reverse bias current; self-fabricated Schottky diode; thermal evaporation technique; wavelength 1.57 mum; wavelength 1.60 mum; wavelength irradiation; Absorption; Aluminum; Fabrication; Optical detectors; Radiation effects; Schottky diodes; Silicon; CO2 detection; Schottky diode; infrared gas detection; spectroscopic technique;
Conference_Titel :
Control, Instrumentation, Energy and Communication (CIEC), 2014 International Conference on
Conference_Location :
Calcutta
DOI :
10.1109/CIEC.2014.6959083
