DocumentCode
1558413
Title
Terrestrial Neutron-Induced Single-Event Burnout in SiC Power Diodes
Author
Asai, Hiroaki ; Sugimoto, Kenji ; Nashiyama, Isamu ; Iide, Yoshiya ; Shiba, Kensuke ; Matsuda, Mieko ; Miyazaki, Yoshio
Author_Institution
High-Reliability Engineering & Components Corporation (HIREC), Tsukuba, Japan
Volume
59
Issue
4
fYear
2012
Firstpage
880
Lastpage
885
Abstract
Tolerance against single-event burnout (SEB) caused by terrestrial neutrons is one of the urgent issues in practical application of SiC power devices. This paper presents evaluation results of neutron-induced SEB in SiC power diodes and differences between SiC and Si devices from the SEB standpoint.
Keywords
Neutrons; Protons; Radiation effects; Semiconductor diodes; Silicon; Silicon carbide; Testing; Power devices; silicon carbide (SiC); single event burnout; terrestrial neutron;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2012.2203145
Filename
6243242
Link To Document