DocumentCode
1558555
Title
On the prediction of transmission errors of MOSFET switches
Author
Abuelma´atti, Muhammad Taher
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Bahrain Univ., Isa Town, Bahrain
Volume
31
Issue
4
fYear
1988
fDate
11/1/1988 12:00:00 AM
Firstpage
284
Lastpage
286
Abstract
A simple formula is presented for the impedance error of a MOSFET-resistor transmission gate. Using this formula, closed-form expressions are derived for the output products resulting from switching sinusoidal input signals. The formula is accurate over a wide range of input signal levels. The results obtained are qualitatively in agreement with those reported by Corti (1986). The extension of the analysis is presented here to accommodate multitone input signals is mathematically straightforward
Keywords
errors; insulated gate field effect transistors; MOSFET-resistor transmission gate; closed-form expressions; impedance error; switching sinusoidal input signals; transmission error prediction; Data engineering; Design engineering; Investments; MOSFET circuits; Mutual funds; Nonlinear equations; Propagation losses; Switches; Threshold voltage; Zero voltage switching;
fLanguage
English
Journal_Title
Education, IEEE Transactions on
Publisher
ieee
ISSN
0018-9359
Type
jour
DOI
10.1109/13.9756
Filename
9756
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