Title :
On the prediction of transmission errors of MOSFET switches
Author :
Abuelma´atti, Muhammad Taher
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Bahrain Univ., Isa Town, Bahrain
fDate :
11/1/1988 12:00:00 AM
Abstract :
A simple formula is presented for the impedance error of a MOSFET-resistor transmission gate. Using this formula, closed-form expressions are derived for the output products resulting from switching sinusoidal input signals. The formula is accurate over a wide range of input signal levels. The results obtained are qualitatively in agreement with those reported by Corti (1986). The extension of the analysis is presented here to accommodate multitone input signals is mathematically straightforward
Keywords :
errors; insulated gate field effect transistors; MOSFET-resistor transmission gate; closed-form expressions; impedance error; switching sinusoidal input signals; transmission error prediction; Data engineering; Design engineering; Investments; MOSFET circuits; Mutual funds; Nonlinear equations; Propagation losses; Switches; Threshold voltage; Zero voltage switching;
Journal_Title :
Education, IEEE Transactions on
