DocumentCode :
1559041
Title :
Photosensitisation of silica planar lightwave interleaver for phase error correction
Author :
Chen, K.P. ; Herman, P.R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Volume :
38
Issue :
1
fYear :
2002
fDate :
1/3/2002 12:00:00 AM
Firstpage :
24
Lastpage :
26
Abstract :
Photosensitivity locking with a 248 nm KrF laser was applied to a hydrogen-soaked silica planar waveguide to improve the refractive index response for post-laser phase trimming of an interleaver. A more than tenfold photosensitivity enhancement was stabilised by annealing the interleaver circuit at 150°C for 24 h. The interleaver channel isolation was improved from 6 to 18 dB by balancing the interferometer phase errors with a modest KrF laser dose
Keywords :
annealing; error correction; hydrogen; laser materials processing; light interferometers; optical fabrication; optical planar waveguides; refractive index; sensitivity; silicon compounds; 150 degC; 24 h; 248 nm; KrF; SiO2:H; annealing; hydrogen-soaked silica planar waveguide; interferometer phase errors; interleaver channel isolation; interleaver circuit; modest KrF laser dose; phase error correction; photosensitisation; photosensitivity enhancement; photosensitivity locking; post-laser phase trimming; refractive index response; silica planar lightwave interleaver;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20020023
Filename :
977538
Link To Document :
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