Photosensitisation of silica planar lightwave interleaver for phase error correction

Author

Chen, K.P. ; Herman, P.R.

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

Volume

38

Issue

1

fYear

2002

fDate

1/3/2002 12:00:00 AM

Firstpage

24

Lastpage

26

Abstract

Photosensitivity locking with a 248 nm KrF laser was applied to a hydrogen-soaked silica planar waveguide to improve the refractive index response for post-laser phase trimming of an interleaver. A more than tenfold photosensitivity enhancement was stabilised by annealing the interleaver circuit at 150°C for 24 h. The interleaver channel isolation was improved from 6 to 18 dB by balancing the interferometer phase errors with a modest KrF laser dose

Keywords

annealing; error correction; hydrogen; laser materials processing; light interferometers; optical fabrication; optical planar waveguides; refractive index; sensitivity; silicon compounds; 150 degC; 24 h; 248 nm; KrF; SiO₂:H; annealing; hydrogen-soaked silica planar waveguide; interferometer phase errors; interleaver channel isolation; interleaver circuit; modest KrF laser dose; phase error correction; photosensitisation; photosensitivity enhancement; photosensitivity locking; post-laser phase trimming; refractive index response; silica planar lightwave interleaver;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20020023

Filename

977538