Title :
High-power, highly reliable 1.05 μm InGaAs strained quantum well laser diodes as pump sources for thulium-doped fibre amplifiers
Author :
Yuda, M. ; Sasaki, T. ; Temmyo, J. ; Sugo, M. ; Amano, C.
Author_Institution :
Photonics Labs., NTT Corp., Kanagawa, Japan
fDate :
1/3/2002 12:00:00 AM
Abstract :
High output power of about 500 mW in chips without kink and having stable operation for over 5500 h under auto-power-control of 225 mW at 50°C have been achieved in 1.05 μm InGaAs strained quantum well laser diodes for pump sources of thulium-doped fibre amplifiers. Low-temperature growth of the InGaAs well layer enabled the lasing wavelength to be extended to 1.05 μm
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser reliability; laser stability; laser transitions; life testing; optical communication equipment; optical fibre amplifiers; optical pumping; optical testing; quantum well lasers; semiconductor device testing; thulium; wavelength division multiplexing; 1.05 micron; 225 mW; 50 C; 500 mW; 5500 h; InGaAs; InGaAs strained quantum well laser diodes; InGaAs well layer; WDM optical networks; auto-power-control; high output power; high-power highly reliable laser diodes; lasing wavelength; low temperature growth; pump sources; stable operation; thulium-doped fibre amplifiers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020021
