Title :
TE- and TM-coupling coefficients in multiquantum well distributed feedback lasers
Author :
Makino, T. ; Adams, D.M.
Author_Institution :
Bell-Northern Res. Ltd., Ottawa, Ont., Canada
Abstract :
Transverse-electric (TE)- and transverse-magnetic (TM)-coupling coefficients for typical 1.55- mu m InGaAs/InP buried-heterostructure (BH) multiquantum-well (MQW) distributed-feedback (DFB) lasers are calculated as a function of waveguide and grating parameters using coupled-mode theory. It is shown that the TE- and TM-coupling coefficients become maximum at a certain number of wells; that number is smaller for TE modes than for TM modes, and increases as the BH stripe width decreases. The difference between the TE- and TM-coupling coefficients decreases as the number of wells increases. There exists a value of the thickness of the grating layer which maximizes the coupling coefficient.<>
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; laser theory; optical waveguide theory; semiconductor junction lasers; 1.55 micron; BH stripe width; IR sources; MQW; TE modes; TE-coupling coefficients; TM modes; TM-coupling coefficients; buried-heterostructure; coupled-mode theory; diode lasers; grating layer thickness; grating parameters; multiquantum well distributed feedback lasers; quantum well number; semiconductors; waveguide parameters; Distributed feedback devices; Gratings; Indium gallium arsenide; Indium phosphide; Laser feedback; Laser modes; Laser theory; Quantum well devices; Waveguide lasers; Waveguide theory;
Journal_Title :
Photonics Technology Letters, IEEE
