Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers

Author

Wada, H. ; Babic, D.I. ; Crawford, D.L. ; Reynolds, T.E. ; Dudley, J.J. ; Bowers, J.E. ; Hu, E.L. ; Merz, J.L. ; Miller, B.I. ; Koren, U. ; Young, M.G.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

3

Issue

11

fYear

1991

Firstpage

977

Lastpage

979

Abstract

Room-temperature pulsed operation of InGaAsP (1.3 mu m)/InP vertical cavity surface emitting lasers has been achieved with threshold current as low as 50 mA using a constricted-mesa structure with dielectric mirrors. Above-room-temperature operation has also been realized with a maximum operation temperature of 66 degrees C. Pulsed and continuous-wave threshold currents at 77 K are 1.5 and 3.9 mA, respectively.<>

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; 1.3 micron; 1.5 mA; 3.9 mA; 50 mA; 66 degC; 77 K; InGaAsP-InP; LW lasing; constricted-mesa structure; dielectric mirrors; high-temperature pulsed operation; laser accessories; maximum operation temperature; semiconductors; threshold current; vertical cavity surface emitting lasers; Chemical lasers; Electrodes; Etching; Gallium arsenide; Indium phosphide; Optical pulses; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.97832

Filename

97832