DocumentCode :
15592
Title :
Thermal Pathfinding for 3-D ICs
Author :
Priyadarshi, Shekhar ; Davis, William Rhett ; Steer, Michael B. ; Franzon, Paul D.
Author_Institution :
North Carolina State Univ., Raleigh, NC, USA
Volume :
4
Issue :
7
fYear :
2014
fDate :
Jul-14
Firstpage :
1159
Lastpage :
1168
Abstract :
System architects traditionally use high-level models of component blocks to predict trends for various design metrics. However, with continually increasing design complexity and a confusing array of manufacturing choices, system-level design decisions cannot be made without considering physical-level details. This effect is more pronounced for 3-D integrated circuits (ICs) because it provides a plethora of physical-level design choices, such as the number of stacking layers and the type of 3-D bonding method, along with the choices provided by 2-D ICs. Thus, it is necessary for system-level flows to predict the complex interactions among system performance, power, temperature, floorplanning, process technology, computer architecture, and software/workloads. This is often called pathfinding. This paper presents a pathfinding flow that integrates SystemC transaction-level electrical and dynamic thermal simulations. The goal of this flow is to pass complex physical constraints to system architects in a convenient form. The applicability of the proposed flow is shown using an example stacking of two processor cores and L2 cache in two-tier 3-D stack.
Keywords :
cache storage; integrated circuit bonding; integrated circuit layout; integrated circuit modelling; microprocessor chips; three-dimensional integrated circuits; 3D bonding method; 3D integrated circuits; L2 cache; SystemC; design complexity; floorplanning; physical level design; processor cores; stacking layers; system level design decisions; thermal pathfinding; two-tier 3D stack; Conductivity; Delays; Heating; Integrated circuit modeling; Materials; Solid modeling; Time-varying systems; 3-D IC; electronic system-level (ESL); electrothermal simulation; pathfinding; through-silicon via (TSV); transaction-level simulation; transaction-level simulation.;
fLanguage :
English
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-3950
Type :
jour
DOI :
10.1109/TCPMT.2014.2321005
Filename :
6819421
Link To Document :
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