DocumentCode :
1559212
Title :
Pulsed laser sampling photon amplifier
Author :
Chang, Sheldon S L
Author_Institution :
Dept. of Electr. Eng., State Univ. of New York, Stony Brook, NY, USA
Volume :
3
Issue :
11
fYear :
1991
Firstpage :
988
Lastpage :
989
Abstract :
The performance of semiconductor laser amplifiers can be significantly improved by injecting carriers with pulsed electric currents of subnanosecond duration. Pulsed operation is illustrated in a Fabry-Perot amplifier and in a traveling-wave amplifier. The resonant amplifier is most sensitive to an input light wave at the instant the carrier density is crossing over the critical region, giving a sharply pulsed sampling effect on the input light wave signal. Compared to a resonant amplifier operating at subcritical electron density, the pulsed amplifier gives much higher gain and peak power. In fact, pulsed operation of a resonant amplifier is also expected to give significantly higher gain than and about the same peak output power as a traveling-wave amplifier. Pulsed operation also improves the performance of a traveling-wave amplifier by attenuating its internally reflected waves.<>
Keywords :
laser theory; semiconductor junction lasers; Fabry-Perot amplifier; amplifier wave attenuation; carrier density; carrier injection; diode lasers; high amplifier gain; input light wave; internally reflected waves; laser sampling photon amplifier; peak output power; peak power; pulsed electric currents; pulsed operation; resonant amplifier; semiconductor laser amplifiers; sharply pulsed sampling effect; subnanosecond duration; traveling-wave amplifier; wave signal; Current; Fabry-Perot; High power amplifiers; Operational amplifiers; Optical pulses; Pulse amplifiers; Resonance; Sampling methods; Semiconductor lasers; Semiconductor optical amplifiers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.97836
Filename :
97836
Link To Document :
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