THz optical-frequency conversion of 1 Gb/s-signals using highly nondegenerate four-wave mixing in an InGaAsP semiconductor laser

Author

Murata, S. ; Tomita, A. ; Shimizu, J. ; Suzuki, A.

Author_Institution

NEC Corp., Kawasaki, Japan

Volume

3

Issue

11

fYear

1991

Firstpage

1021

Lastpage

1023

Abstract

The authors report the application of the highly nondegenerate four-wave mixing (HNDFWM) process to a 1.5- mu m InGaAsP semiconductor laser in optical-frequency conversion experiments on 1-Gb/s intensity-modulated signals in a 1-THz conversion range. This conversion is based on a subpicosecond ultrafast nonlinear gain process in the laser. The HNDFWM was generated through the use of an injection-locking technique. The possibility of applying this phenomenon to an optical fiber dispersion compensator is also discussed.<>

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; multiwave mixing; optical frequency conversion; optical modulation; semiconductor junction lasers; 1 Gbit/s; 1.5 micron; III-V semiconductor; InGaAsP; InGaAsP semiconductor laser; THz optical-frequency conversion; highly nondegenerate four-wave mixing; injection-locking technique; intensity-modulated signals; optical fiber dispersion compensator; subpicosecond ultrafast nonlinear gain process; Fiber nonlinear optics; Four-wave mixing; Frequency conversion; Laser modes; Nonlinear optics; Optical mixing; Optical pumping; Pump lasers; Semiconductor lasers; Ultrafast optics;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.97848

Filename

97848