CMOS-compatible high-speed planar silicon photodiodes fabricated on SOI substrates

Author

Csutak, Sebastian M. ; Schaub, Jeremy D. ; Wu, Wei E. ; Shimer, Rob ; Campbell, Joe C.

Volume

38

Issue

2

fYear

2002

fDate

2/1/2002 12:00:00 AM

Firstpage

193

Lastpage

196

Abstract

We report high-speed planar silicon p-i-n photodiodes fabricated on silicon-on-insulator (SOI) substrates. The devices were fabricated in standard CMOS technology with no additional fabrication steps required. The 250-nm finger-spacing devices exhibited 15- and 8-GHz bandwidths for devices processed on 200- and 2000-nm SOI substrates, respectively, at a reverse bias of -9 V. Quantum efficiencies of 12% and 2% were measured on the 2- and 0.2-μm thick SOI, respectively. The dark current was 5 pA for -3 V bias and 500 μA for -9 V bias

Keywords

CMOS integrated circuits; integrated optoelectronics; optical receivers; photodetectors; photodiodes; silicon; silicon-on-insulator; substrates; -9 V; 0.2 micron; 15 GHz; 2 micron; 5 pA; 500 muA; 8 GHz; CMOS-compatible high-speed planar Si photodiodes; SOI substrates; Si; dark current; fabrication steps; optical receivers; quantum efficiencies; reverse bias; silicon-on-insulator substrates; standard CMOS technology; Bandwidth; CMOS technology; Costs; Ethernet networks; Fabrication; Frequency response; Optical receivers; PIN photodiodes; Silicon on insulator technology; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.980272

Filename

980272