Title :
Emission dynamics and optical gain of 1.3-μm (GaIn)(NAs)/GaAs lasers
Author :
Hofmann, Martin R. ; Gerhardt, Nils ; Wagner, Anke M. ; Ellmers, C. ; Höhnsdorf, Falko ; Koch, Jürg ; Stolz, Wolfgang ; Koch, Stephan W. ; Rühle, Wolfgang W. ; Hader, J. ; Moloney, Jerome V. ; Reilly, E. P O ; Borchert, Bernd ; Egorov, A.Y. ; Riechert, He
Author_Institution :
Fachbereich Phys. Chem., Philipps-Univ., Marburg, Germany
fDate :
2/1/2002 12:00:00 AM
Abstract :
The ultrafast emission dynamics of a 1.3-μm (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser is studied by femtosecond luminescence upconversion. We obtain a minimum peak delay of 15.5 ps and a minimum pulse width of 10.5 ps. Laser operation with picosecond emission dynamics is demonstrated over a temperature range from 30 to 388 K. The bandgap shift with temperature of (GaIn)(NAs)/GaAs is determined to be about -2.9·10-4 eV/K, which is smaller than for GaAs. Our measurements of the optical gain provide gain spectra similar to those of commercial (GaIn)(PAs)/InP-structures at moderate densities but broaden considerably for elevated carrier densities due to the stronger carrier confinement. We compare our experimental results with gain spectra calculated from a microscopic model and confirm the predictive capability of the model. The theoretical gain spectra are used as the input for a calculation of the temperature dependence of the (GaIn)(NAs)/GaAs surface-emitter emission which results in very good agreement with experiment
Keywords :
III-V semiconductors; carrier density; gallium arsenide; high-speed optical techniques; indium compounds; infrared sources; infrared spectra; laser transitions; photoluminescence; quantum well lasers; surface emitting lasers; time resolved spectroscopy; 1.3 micron; 10.5 ps; 15.5 ps; 30 to 388 K; GaInNAs-GaAs; GaInNAs/GaAs lasers; bandgap shift; elevated carrier densities; emission dynamics; femtosecond luminescence upconversion; gain spectra; microscopic model; minimum peak delay; minimum pulse width; moderate densities; optical gain; picosecond emission dynamics; stronger carrier confinement; surface-emitter emission; temperature dependence; temperature range; ultrafast emission dynamics; vertical-cavity surface-emitting laser; Delay; Gallium arsenide; Luminescence; Optical pulses; Predictive models; Stimulated emission; Surface emitting lasers; Temperature distribution; Ultrafast optics; Vertical cavity surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
