Localization of electrical-insulation and partial-discharge failures of IGBT modules

Author

Mitic, Gerhard ; Lefranc, Guy

Author_Institution

Corporate Technol. Dept., Siemens AG, Munich, Germany

Volume

38

Issue

1

fYear

2002

Firstpage

175

Lastpage

180

Abstract

The partial discharge (PD) and insulation resistance is very important in view of the increasing operating voltages of insulated gate bipolar transistor modules. PD spectroscopy showed that the PDs from metallization edges and interfaces in silicone gel were the main sources of PD at high voltages. It also allows these types of PDs to be clearly distinguished. As the PDs from interfaces in silicone gel increase strongly at high voltages, it is especially important for the silicone gel to adhere well to the ceramic

Keywords

gels; insulated gate bipolar transistors; insulation testing; modules; partial discharge measurement; semiconductor device testing; silicones; IGBT Modules; PD spectroscopy; ceramic; electrical-insulation-failures; high voltages; insulated gate bipolar transistor modules; interfaces; metallization edges; operating voltages; partial-discharge failures; phase-resolved partial discharge; silicone gel; Ceramics; Dielectrics and electrical insulation; Electric resistance; Insulated gate bipolar transistors; Metallization; Partial discharges; Pulse width modulation converters; Spectroscopy; Testing; Voltage;

fLanguage

English

Journal_Title

Industry Applications, IEEE Transactions on

Publisher

ieee

ISSN

0093-9994

Type

jour

DOI

10.1109/28.980373

Filename

980373