Title :
Localization of electrical-insulation and partial-discharge failures of IGBT modules
Author :
Mitic, Gerhard ; Lefranc, Guy
Author_Institution :
Corporate Technol. Dept., Siemens AG, Munich, Germany
Abstract :
The partial discharge (PD) and insulation resistance is very important in view of the increasing operating voltages of insulated gate bipolar transistor modules. PD spectroscopy showed that the PDs from metallization edges and interfaces in silicone gel were the main sources of PD at high voltages. It also allows these types of PDs to be clearly distinguished. As the PDs from interfaces in silicone gel increase strongly at high voltages, it is especially important for the silicone gel to adhere well to the ceramic
Keywords :
gels; insulated gate bipolar transistors; insulation testing; modules; partial discharge measurement; semiconductor device testing; silicones; IGBT Modules; PD spectroscopy; ceramic; electrical-insulation-failures; high voltages; insulated gate bipolar transistor modules; interfaces; metallization edges; operating voltages; partial-discharge failures; phase-resolved partial discharge; silicone gel; Ceramics; Dielectrics and electrical insulation; Electric resistance; Insulated gate bipolar transistors; Metallization; Partial discharges; Pulse width modulation converters; Spectroscopy; Testing; Voltage;
Journal_Title :
Industry Applications, IEEE Transactions on
