DocumentCode :
1559630
Title :
Optimization of an optically pumped 1.3-μm GaInNAs vertical-cavity surface-emitting laser
Author :
Calvez, S. ; Bums, D. ; Dawson, M.D.
Author_Institution :
Inst. of Photonics, Glasgow Univ., UK
Volume :
14
Issue :
2
fYear :
2002
Firstpage :
131
Lastpage :
133
Abstract :
Numerical model predictions are used to optimize the design of an 980-nm-pumped 1.3-μm GaInNAs vertical-cavity surface-emitting laser. The optimum architecture utilizes pumping through the substrate and a double-band mirror to obtain double-pass pumping. We compare the results obtained with this approach to those with conventional architectures. These results are of general relevance to GaInNAs optically pumped surface-emitting or amplifying structures.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser mirrors; optical pumping; quantum well lasers; semiconductor device models; surface emitting lasers; 1.3 micron; Bragg mirrors; GaInNAs; double-band mirror; double-pass pumping; long wavelength; multilayer stack; numerical model predictions; optically pumped VCSEL; optimum architecture; quantum-well excitation; semiconductor device modeling; Design optimization; Laser modes; Mirrors; Numerical models; Optical design; Optical pumping; Pump lasers; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.980462
Filename :
980462
Link To Document :
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