DocumentCode
1559631
Title
A novel separate lateral confinement quantum-well heterostructure laser
Author
Swint, R.B. ; Woo, C.Y. ; Huber, A.E. ; Roh, S.D. ; Coleman, J.J. ; Faircloth, B.O. ; Zediker, M.S.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Volume
14
Issue
2
fYear
2002
Firstpage
134
Lastpage
136
Abstract
Utilizing separate structures for the lateral confinement of the optical mode and injected carriers, we optimize the overlap of the optical mode with the gain to demonstrate lasers with lower threshold currents than standard ridge waveguide lasers.
Keywords
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; quantum well lasers; waveguide lasers; InGaAs; MOCVD; buried heterostructure; effective index; far field divergence angles; injected carriers; lasing threshold; lateral gain confinement factor; lower threshold currents; optical mode overlap; quantum-well heterostructure laser; ridge waveguide; separate lateral confinement; Carrier confinement; Etching; Laser modes; Optical pumping; Optical waveguides; Potential well; Quantum well lasers; Semiconductor lasers; Threshold current; Waveguide lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.980465
Filename
980465
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