Title :
A novel separate lateral confinement quantum-well heterostructure laser
Author :
Swint, R.B. ; Woo, C.Y. ; Huber, A.E. ; Roh, S.D. ; Coleman, J.J. ; Faircloth, B.O. ; Zediker, M.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
Utilizing separate structures for the lateral confinement of the optical mode and injected carriers, we optimize the overlap of the optical mode with the gain to demonstrate lasers with lower threshold currents than standard ridge waveguide lasers.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; quantum well lasers; waveguide lasers; InGaAs; MOCVD; buried heterostructure; effective index; far field divergence angles; injected carriers; lasing threshold; lateral gain confinement factor; lower threshold currents; optical mode overlap; quantum-well heterostructure laser; ridge waveguide; separate lateral confinement; Carrier confinement; Etching; Laser modes; Optical pumping; Optical waveguides; Potential well; Quantum well lasers; Semiconductor lasers; Threshold current; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
