Title :
Wavelength-independent operation of EA-modulator integrated wavelengthselectable microarray light sources
Author :
Yashiki, K. ; Kudo, K. ; Morimoto, T. ; Sudo, S. ; Muroya, Y. ; Tamanuki, T. ; Ishizaka, M. ; Hosoda, T. ; Furushima, Y. ; Hatakeyama, H. ; Yokoyama, Y. ; Mori, K. ; Sasaki, T. ; Yamaguchi, M.
Author_Institution :
NEC Corp. Otsu, Shiga, Japan
Abstract :
In this letter, we have simultaneously fabricated five wavelength-selectable microarray light sources (WSLs), each having a different wavelength range integrated with an electroabsorption (EA) modulator on a single wafer. We also introduced a novel device configuration scheme for wavelength-independent modulation. The five EA-WSLs fully covered the entire C-band and had a low uniform threshold current of 6 /spl plusmn/ 1 mA at 25/spl deg/C. Wavelength-independent extinction characteristics were obtained over a tuning wavelength range of 8 nm, and 2.5-Gb/s transmission over 600 km was successfully achieved.
Keywords :
distributed feedback lasers; electro-optical modulation; electroabsorption; integrated optics; laser tuning; semiconductor laser arrays; semiconductor optical amplifiers; wavelength division multiplexing; 2.5 Gbit/s; 25 C; 6 mA; 600 km; C-band range; DFB-array; EA-modulator integrated wavelength-selectable microarray light sources; device configuration scheme; distributed-feedback laser; electroabsorption modulator; electron beam lithography; multimode interference; selective MOVPE; semiconductor optical amplifier; tuning wavelength range; uniform threshold current; wavelength-division multiplexing; wavelength-independent extinction characteristics; wavelength-independent modulation; wavelength-selectable light source; wavelength-selectable microarray light sources; Absorption; Laser tuning; Light sources; Optical films; Optical modulation; Optical transmitters; Optical tuning; Semiconductor optical amplifiers; Temperature dependence; Wavelength division multiplexing;
Journal_Title :
Photonics Technology Letters, IEEE
