Pixelless thermal imaging with integrated quantum-well infrared photodetector and light-emitting diode

Author

Dupont, E. ; Byloos, M. ; Gao, M. ; Buchanan, M. ; Song, C.-Y. ; Wasilewski, Z.R. ; Liu, H.C.

Author_Institution

Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada

Volume

14

Issue

2

fYear

2002

Firstpage

182

Lastpage

184

Abstract

A large pixelless thermal imager based on the epitaxial integration of a GaAs-AlGaAs quantum-well infrared photodetector and a GaAs light-emitting diode is demonstrated. The device transforms a mid-infrared (9 μm) scene to a near-infrared (0.82 μm) emission image with a temperature resolution of /spl sim/1 K, limited by the integration capacity of the near-visible camera.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; image sensors; infrared detectors; infrared imaging; light emitting diodes; photodetectors; quantum well devices; 0.82 micron; 9 micron; CCD optics; Fabry-Perot resonances; GaAs-AlGaAs; diffraction grating; epitaxial integration; large pixelless thermal imager; light-emitting diode; mid-infrared scene; near-infrared emission image; near-visible camera; noise equivalent temperature difference; quantum-well infrared photodetector; temperature resolution; Gallium arsenide; Infrared imaging; Layout; Light emitting diodes; Optical imaging; Photodetectors; Pixel; Quantum well devices; Quantum wells; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.980504

Filename

980504