The heterogenous integration of GaN thin-film metal-semiconductor-metal photodetectors onto silicon

Author

Seo, Sangwoo ; Lee, K.K. ; Kang, Sangbeom ; Huang, S. ; Doolittle, William A. ; Jokerst, N.M. ; Brown, A.S. ; Brooke, M.A.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA

Volume

14

Issue

2

fYear

2002

Firstpage

185

Lastpage

187

Abstract

The heterogeneous integration of GaN thin-film metal-semiconductor-metal (MSM) photodetectors onto a host substrate of SiO/sub 2/-Si is reported. Thin-film GaN photodetectors were separated from the lithium gallate (LiGaO/sub 2/) growth substrate using selective etching, and contact bonded onto a SiO/sub 2/-Si host substrate. The thin-film MSMs exhibited a dark current of 13.36 pA and an UV photoresponse at 308 nm of 0.11 A/W at a reverse bias voltage of 20 V. This first demonstration of GaN thin-film device integration onto SiO/sub 2/-Si using a low-temperature integration process, combined with the advances in GaN material quality on LiGaO/sub 2/ substrates, enables the integration of GaN devices with Si circuitry for heterogeneously integrated systems.

Keywords

III-V semiconductors; etching; gallium compounds; integrated optoelectronics; metal-semiconductor-metal structures; molecular beam epitaxial growth; photodetectors; semiconductor growth; ultraviolet detectors; wafer bonding; wide band gap semiconductors; 13.36 pA; 308 nm; GaN; Si; SiO/sub 2/-Si; UV photoresponse; contact bonded; dark current; heterogeneous integration; low-temperature integration process; molecular beam epitaxy; responsivity; reverse bias voltage; selective etching; thin-film MSM photodetectors; Bonding; Dark current; Etching; Gallium nitride; Lithium; Photodetectors; Semiconductor thin films; Substrates; Thin film devices; Transistors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.980507

Filename

980507