Title :
Sub-picosecond intersub-band electron scattering times in GaN/AlGaN superlattices grown by molecular beam epitaxy
Author :
Ng, H.M. ; Gmachl, C. ; Frolov, S.V. ; Chu, S.N.G. ; Cho, A.Y.
Author_Institution :
Lucent Technol. Bell Labs, Murray Hill, NJ, USA
Abstract :
GaN quantum wells were studied, grown by plasma-assisted molecular beam epitaxy with a sub-band spacing of ~740 meV (λ=1.67 μm). The GaN quantum wells are clad on both sides with short-period superlattice barriers. Using the time-resolved pump-and-probe technique, with 1.55 μm pump and 1.70 μm probe wavelength, an intersub-band electron scattering time of 370 fs was measured
Keywords :
III-V semiconductors; aluminium compounds; electron-electron scattering; gallium compounds; high-speed optical techniques; molecular beam epitaxial growth; optical pumping; plasma deposition; semiconductor superlattices; 1.55 micron; 1.67 micron; 1.70 micron; 370 fs; 740 meV; GaN; GaN quantum wells; GaN-AlGaN; GaN/AlGaN superlattices; intersub-band electron scattering time; molecular beam epitaxy; plasma-assisted molecular beam epitaxy; probe wavelength; pump wavelength; short-period superlattice barriers; sub-band spacing; sub-picosecond intersub-band electron scattering times; time-resolved pump-and-probe technique;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20010752
